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| savantic semiconductor product specification silicon npn power transistors 2SD2066 d escription with to-3pn package wide area of safe operation complement to type 2sb1373 applications for high power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 12 a t a =25 2.5 p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2066 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma; i b =0 160 v v cesat collector-emitter saturation voltage i c =8a; i b =0.8a 2.0 v v be base-emitter on voltage i c =8a;v ce =5v 1.8 v i cbo collector cut-off current v cb =160v; i e =0 50 a i ebo emitter cut-off current v eb =5v; i c =0 50 a h fe-1 dc current gain i c =20ma ; v ce =5v 20 h fe-2 dc current gain i c =1a ; v ce =5v 60 200 h fe-3 dc current gain i c =8a ; v ce =5v 15 f t transition frequency i c =0.5a ; v ce =5v 20 mhz c ob collector output capacitance f=1mhz;v cb =10v 210 pf h fe-2 classifications q p 60-120 100-200 savantic semiconductor product specification 3 silicon npn power transistors 2SD2066 package outline fig.2 outline dimensions |
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